ScienceON 검색
ScienceON '특허' 검색
더보기| No | 제목 / 내용 |
|---|---|
| 1 |
MEDICAL DIAGNOSTIC IMAGING ASSISTANCE APPARATUS / FUJIFILM CORP (PURPOSE)To provide a medical diagnostic imaging assistance apparatus capable of reducing the moving distance of an image reading doctor's sight line in displaying two related images of objects for reading on respective monitors. ! When right and left MLO (Mediolateral Oblique) images 301 and right and left CC (Craniocaudal) images 302 of objects for reading are displayed on monitors 18A and 18B, the moving distance of the reading doctor's sight line can be reduced by displaying the left/right MLO images 301 and left/right CC images 302 (D4 |
| 2 |
SRAM FOR STABILIZED DATA LATCH OPERATION AND ITS DRIVING METHOD / HYUNDAI ELECTRON IND CO LTD PROBLEM TO BE SOLVED: To allow a stabilized data latch operation of the SRAM cell which uses lower power source voltage(V cc). SOLUTION: This SRAM is constituted so that the sources of driving transistors 301, 302 of the SRAM cell are not connected to the ground potential, but to the negative voltage driving section 300 which generates a negative voltage or the ground potential. The negative voltage driving section 300 drives the source sides of the driving transistors 301, 302 at negative voltages only when the word line(W/L) is enabled in the readout cycle and otherwise supplies the ground potential to the source sides of the driving transistors 301, 302. |
| 3 |
CATHETER SYSTEM OF SPECIFIED DEAD SPACE FOR THE DELIVERY OF A LOW VOLUME LIQUID BOLUS / SCIMED LIFE SYSTEMS, INC. Several catheter systems (10, 60, 84, 98, 120, 204, 240 and 260) for the delivery of a low volume liquid bolus include a catheter (120) having a proximal end (122), a distal end (126), and an infusion lumen extending therein (132). An administering portion (138, 301) is disposed at the distal end of the catheter, and is configured to administer a bolus of liquid in response to positive pressure in a distal portion of the lumen. The catheter system of the present invention has a dead space of less than 0.32 cc, and preferably less than 0.15 cc in which residual therapeutic agents remain after delivery. |
| 4 |
SEMICONDUCTOR DEVICE / PS4 LUXCO S A R L PROBLEM TO BE SOLVED: To suppress signal transmission delay in a lamination type semiconductor device capable of selectively utilizing a plurality of through electrodes.SOLUTION: One interface chip IF and a plurality of core chips CC0 to CC7 are electrically connected through a plurality of through electrodes. A data signal of a driver circuit 401 is input to a core chip CC7 through either a through electrode 301 or 302. An output switching circuit 190 selects a through electrode by activating either a tristate inverter IVR1 or IVR2. The tristate inverter amplifies the data signal and transmits it to the through electrode. Similarly, an input switching circuit 192 activates either a tristate inverter IVT1 or IVT2. These tristate inverters also amplify the data signal output from the through electrode and transmits them to a receiver circuit 411. |
| 5 |
COMMON-MODE COMPENSATION TECHNIQUE FOR PROGRAMMABLE GAIN AMPLIFIERS / QUALCOMM INC Certain aspects of the present disclosure provide methods and apparatus for adjusting a bandwidth of an amplifier (e.g., a programmable gain amplifier (PGA)). In certain aspects, the PGA generally includes at least one amplification stage (320) having an input (301) and an output (303), a plurality of compensation capacitors (Cc0, Cc1, Cc2) and at least one first switch (304, 306) configured to selectively couple at least one capacitor of the plurality of compensation capacitors between the input and the output of the at least one amplification stage. The amplifier includes at least one second switch (308, 310) configured to selectively couple the at least one capacitor to a node (CM sense) such that the at least one capacitor is coupled to only one of the output or the node, where a voltage at the node is a differential mode (DM) reference potential for the amplification stage. |
| 6 |
SEMICONDUCTOR DEVICE / ELPIDA MEMORY INC (PURPOSE)To suppress a delay in the transmission of a signal in a laminated semiconductor device where a plurality of through-electrodes can selectively be used. ! One interface chip IF is electrically connected with a plurality of core chips CC0 to CC7 via the plurality of through-electrodes. A data signal of a driver circuit 401 is inputted to the core chip CC7 via any of the through-electrode 301 or 302. An output switch circuit 190 selects a through-electrode by activating a try state inverter IVR1 or IVR2. The try state inverter amplifies the data signal and sends it to the through-electrode. Similarly, an input switch circuit 192 activates the try state inverter IVT1 or IVT2. The try state inverters also amplifies the data signal sent from the through-electrode and supplies it to a receiver circuit 411. ! (C)2011,JPO&INPIT |
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SEMICONDUCTOR DEVICE / ELPIDA MEMORY INC (PURPOSE)To properly maintain receiving-side signal quality, even when an external terminal for test is provided at a signal-receiving side in a stacked semiconductor device capable of selectively utilizing a plurality of through-electrodes. ! One interface chip IF and a plurality of core chips CC0-CC7 are stacked, and the semiconductor chips are electrically connected by a plurality of through-electrodes. Data signal of a driver circuit 401 is inputted to the core chip CC7 via either of the through-electrodes 301 and 302. An output selector circuit 184 selects the through-electrode, by activating any of tristate inverters TI1 and IVR2. When a primary selector circuit 186 is to activate the inverter IVS, a test signal is supplied from a test pad TP to a receiver circuit 411. When the inverter IVS is to be activated, a data signal is supplied from any one of through-electrodes to the receiver circuit 411. ! (C)2011,JPO&INPIT |
| 8 |
INTERFACE CIRCUIT OF INPUT/OUTPUT DEVICE / HITACHI LTD (PURPOSE) To make it possible to exactly execute the refresh RF operation of a memory, by providing a refresh counter which outputs an overflow signal when a fixed number of clocks has been counted in the central control unit CC. (CONSTITUTION) In the I/O interface circuit which sends and receives the information by executing in order each sequence of wake-up, transfer and end between the central control unit CC and I/O, a response signal informing that I/O has received a control signal from CC to I/O is sent back by one signal line. Whenever a control signal 300 is sent, CC resets the RF counter 601 through the OR gate 600 and the first transition differentiating circuit 612. In case a response signal 301 from I/O is not sent back, when the counter 601 counts a fixed number of clocks CP, an overflow signal 605 is output, the flip-flop 609 is set, an IO mode signal 604 is sent back artificially, and the sequence is made to proceed. In this case, an RF signal 610 is output through the gate 611 by giving an instruction 615 to the following sequence. |
| 9 |
SEMICONDUCTOR DEVICE / PS4 LUXCO S A R L PROBLEM TO BE SOLVED: To reduce a difference in signal path length before and after replacement when a failure of a through-electrode is repaired by using a spare through-electrode.SOLUTION: A semiconductor device comprises: a semiconductor chip IF including driver circuits 101 to 108; a semiconductor chip CC including receiver circuits 201 to 208; and a through-electrodes 301 to 309 provided in the semiconductor chip CC. The semiconductor chip IF has an output switching circuit 120 to connect an output terminal of an i-th (i is integer of 1 to n) driver circuit exclusively to any one of i-th to (i+m)th through-electrodes, and the semiconductor chip CC has an input switching circuit 220 to connect an input terminal of an i-th (i is integer of 1 to n) receiver circuit exclusively to any one of i-th to (i+m)th through-electrodes. The difference in wiring length hardly occurs between the signal paths before and after replacement, thereby improving signal quality. |
| 10 |
SEMICONDUCTOR DEVICE / HITACHI ULSI SYSTEMS CO LTD (PURPOSE)To reduce a difference in signal path length before and after replacement when a failure of a through-electrode is repaired by using a spare through-electrode. ! The semiconductor device comprises: a semiconductor chip IF including driver circuits 101 to 108; a semiconductor chip CC including receiver circuits 201 to 208; and the through-electrodes 301 to 309 prepared in the semiconductor chip CC. The semiconductor chip IF has an output switching circuit 120 to connect an output terminal of the i-th (i is integer of 1 to n) driver circuit exclusively to any one of the i-th to (i+m)th through-electrodes, and the semiconductor chip CC has an input switching circuit 220 to connect an input terminal of the i-th (i is integer of 1 to n) receiver circuit exclusively to any one of the i-th to (i+m)th through-electrodes. The difference in wiring length does not occur between the signal paths before and after replacement, thereby improving signal quality. ! (C)2011,JPO&INPIT |
ScienceON '논문' 검색
더보기ScienceON '보고서' 검색
더보기| No | 제목 / 내용 |
|---|---|
| 1 |
통합시스템 보안성 평가체계 및 방법연구 지연희 , 한남대학교 , 2006 |
| 2 |
컴퓨터를 이용한 통합생산자동화 기술 개발;사출성형금형의 생산자동화 CIM 모델플렌트 한석균 , 한국과학기술연구원 , 1991 |
| 3 |
정보통신망 신뢰성 및 안전성 확보방안연구 - 자율규제 중심으로 - 김명아 , 한국인터넷진흥원(KISA) , 2009 |
| 4 |
생리활성 선도물질의 탐색기술 개발;세포반응의 신호전달 조절 선도물질의 탐색기술 개발 김명아 , 한국생명공학연구원 , 1995 |
| 5 |
생리활성 선도물질의 탐색기술 개발 오혜경 , 한국과학기술연구원 생명공학연구소 , 1995 |
| 6 |
분산처리 진단/교정 시스템 및 개방형 전자우편 시스템 개발에 관한 연구 박태준 , 한국전자통신연구원 , 1995 |
| 7 |
모야모야 환자에서 microRNA 단일핵산다형성의 발굴과 발현조사 박영석 , 차의과학대학교 산학협력단 , 2012 |
| 8 |
다목적 실용위성 2호 과학관측용 고해상도 카메라 개발사업 송현숙 , 한국항공우주연구원 , 2001 |
| 9 |
국내 평가기준과 호환성 있는 국제공통평가기준 기반의 침입탐지시스템 등급별 보안환경 및 위협 분석 정지은 , 순천향대학교 , 2002 |
| 10 |
공통평가기준 3.0 분석 최윤성 , 성균관대학교 , 2006 |