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천연 흑연 및 이로 제조된 변성 천연 흑연 재료, 제조 방법 및 응용 / 비티아르 뉴 머티리얼스 그룹 천연 흑연 및 이로 제조된 변성 천연 흑연 재료, 제조 방법 및 응용을 제공한다. 상기 천연 흑연은 (1) 입도가 D50<10μm이고, D90/D10<2.5이며, (2) 002 면 간격은 0.336 내지 0.360이고, I002/I110≤35이며, (3) 0.6g/cc≤포화 탭 밀도<1.3g/cc이며, (4)1.0m2/g≤비표면적<10.0m2/g인 것을 특징으로 한다. 특정 입도, 특정 방향성, 특정 탭 밀도 및 비표면적을 구비하는 천연 흑연을 제공하며, 이를 제조 원료로서 최종으로 제조된 변성 천연 흑연 재료는 상대적으로 높은 등방성을 구비하므로, 보다 우수한 배율 성능 및 순환 성능을 구비한다. |
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NATURAL GRAPHITE, MODIFIED NATURAL GRAPHITE MATERIAL PREPARED THEREFROM, PREPARATION METHOD, AND APPLICATIONS / LI, Dongdong Provided are a natural graphite, a modified natural graphite material prepared therefrom, a preparation method, and applications. The natural graphite has the following characteristics: a particle size D50 smaller than 10 μm, and D90/D102.5; a 002 interplanar spacing ranging from 0.336 to 0.360 nm, I002/I110≤35; a saturated tap density greater than or equal to 0.6 g/cc and smaller than 1.3 g/cc; and a specific surface area greater than or equal to 1.0 m2/g and smaller than 10.0 m2/g. The provided natural graphite has specific particle size, orientation, tap density and surface area and can serve as a raw material for preparing modified natural graphite material, and the prepared modified natural graphite material has high isotropy and thus has better rate performance and cycle performance. |
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Method and apparatus for determining CC-NUMA intra-processor delays / Bull HN Information Systems Inc. In a Cache-Coherent Non-Uniform Memory Architecture (CC-NUMA), the time as measured in cycles that it takes for cache control signals to travel between processors (92) sharing an L2 cache (94) differs from the time it takes for those signals to travel between processors (92) not sharing the same L2 cache (94). This difference, or DELTA, is dynamically computed by computing (332) the time it takes for a invalidate cache line cache command to travel between a local processor (92) and a master processor (92). This computation (334) is then made for the time it takes the signal to travel between a remote processor (92) and the master processor (92). The difference (336) is the DELTA value in cycles. This DELTA value can then be utilized to bias delay values when exhaustively testing the interactions among multiple processors in a CC-NUMA environment (180). |
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NATURAL GRAPHITE, MODIFIED NATURAL GRAPHITE MATERIAL PREPARED THEREFROM, PREPARATION METHOD, AND APPLICATIONS / BTR NEW MATERIAL GROUP CO., LTD. A natural graphite, a modified natural graphite material prepared therefrom, a preparation method, and applications. The natural graphite has the following characteristics: (1) granularity D50 < 10 μm, D90/D10 < 2.5; (2) 002 interplane distance being 0.336-0.360, I/I ≤ 35; (3) 0.6 g/cc ≤ saturation tap density < 1.3 g/cc; and (4) 1.0 m/g ≤ specific surface area < 10.0 m/g. Provided is the natural graphite having a specific granularity, specific orientation, specific saturation tap density, and specific surface area and serving as a preparation raw material, and the modified natural graphite material that is ultimately prepared has increased isotropy, thus having improved rate performance and cycle performance. |
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NATURAL GRAPHITE, MODIFIED NATURAL GRAPHITE MATERIAL PREPARED THEREFROM, PREPARATION METHOD, AND APPLICATIONS / BTR NEW MATERIAL GROUP CO., LTD. Provided are a natural graphite, a modified natural graphite material prepared therefrom, a preparation method, and applications. The natural graphite has the following characteristics: a particle size D50 smaller than 10µm, and D90/D10<2.5; a 002 interplanar spacing ranging from 0.336 to 0.360 nm, I002/I110≤35; a saturated tap density greater than or equal to 0.6g/cc and smaller than 1.3g/cc; and a specific surface area greater than or equal to 1.0m2/g and smaller than 10.0m2/g. The provided natural graphite has specific particle size, orientation, tap density and surface area and can serve as a raw material for preparing modified natural graphite material, and the prepared modified natural graphite material has high isotropy and thus has better rate performance and cycle performance. |
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GALLIUM ARSENIDE PHOSPHIDE MIXED-CRYSTAL EPITAXIAL WAFER / MITSUBISHI KASEI POLYTEC CO (PURPOSE) To obtain a wafer wherein one side of crosshatches is rectlinear and it is suitable for a substrate as a quaternary mixed-crystal epitaxial wafer by using a compound single-crystal substrate whose substrate surface is a specific plane orientation as the plane orientation of the surface of a single-crystal substrate and which is composed of a group IIIb element and a group Vb element of the periodic table. (CONSTITUTION) HCl a group IIIb component gas for epitaxial-layer formation use is introduced into Ga in a quartz board at 8cc/min; it is reacted with the a; a-is produced. On the other hand, the flow rate of hydrogen arsenide (AsH3 ), at a concentration of 10% which has been diluted with H2 , as a group Vb component gas for epitaxial-layer formation use, is reduced gradually down to 252cc/min from 336cc/min. At the same time, the flow rate of hydrogen phosphide (PH3 ), at a concentration of 10%, which has been diluted with H2 , as a group V component gas for epitaxial-layer formation use, is increased gradually up to 80cc/min from 0cc/min. A GaAs1- XPX composition-graded layer is formed. After that, a GaAs1- XPX composition-definite layer is formed. |
ScienceON '논문' 검색
MOREScienceON '보고서' 검색
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희토류 원소별 고도 분리.정제에 의한 IT 산업용 원료 및 응용소재 제조기술 개발 연구 김성재 , 한국지질자원연구원 , 2006 |
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정밀 초음파 부상기술과 이를 활용한 10세대급 코팅 및 건조장치 개발 권오준 , 케이씨텍(주) , 2018 |
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국제 표준 ebXML/ebWML 프레임웍 기술 개발에 관한 연구 왕지현 , 한국전자통신연구원 , 2003 |